PhD4Gen seminar 15.03.2022

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Seminarium Zakładu Energetyki Jądrowej i Analiz Środowiska (UZ3)
Departament Badań Układów Złożonych (DUZ)

Wtorek: 15.03.2022

Ewelina Kucal
Simulation of ion irradiation of Silicon Carbide

Silicon Carbide (SiC) is a promising material for several applications such as nuclear
application, electronic and space application. Characterizing and understanding radiation effects and damage creation is crucial for materials application in nuclear. Radiation defects can be studied not only by experiments but also by simulations methods.
In the talk, the possible simulation tools to study ion irradiation damage in SiC, like TRIM and LAMMPS will be described.

Serdecznie zapraszamy
M. Dąbrowski, T. Kwiatkowski


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